Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor

0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.09.033 ⇑ Corresponding author. Tel.: +91 11 24115580; fax E-mail addresses: [email protected] ( (R.S. Gupta). 1 Tel.: +91 11 24115580; fax: +91 11 24110606. In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT has been analyzed and compared with the corresponding performance o...

Gate capacitances of high electron mobility transistors

The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photolumine...

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors